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| PTF 10193 12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor Description The PTF 10193 is an internally matched, 12-watt GOLDMOS FET intended for GSM, CDMA and TDMA amplifier applications from 860 to 960 MHz. This device operates at 60% efficiency with 18 dB typical gain. Nitride surface passivation and full gold metallization ensure excellent device lifetime and reliability. * * INTERNALLY MATCHED Performance at 960 MHz, 26 Volts - Output Power = 12 Watts - Efficiency = 60% Typ - Power Gain = 18 dB Typ Full Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel 100% Lot Traceability * * * Typical Output Power & Efficiency vs. Input Power 20 70 * * Efficiency Output Power (Watts) Efficiency (%) x 16 12 8 4 0 0.0 0.2 0.4 0.6 60 50 VDD = 26 V Output Power 40 30 20 1234 1 56 01 A-1 000 9 3 234 8A 5 600 1019 3 08 IDQ = 160 mA f = 960 MHz Input Power (Watts) Package 20259 RF Specifications (100% Tested) Characteristic Common Source Power Gain (VDD = 26 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz) Power Output at 1 dB Compressed (VDD = 26 V, IDQ = 160 mA, f = 960 MHz) Drain Efficiency (VDD = 26 V, POUT = 12 W, IDQ = 160 mA, f = 960 MHz) Load Mismatch Tolerance (VDD = 26 V, POUT = 12 W, IDQ = 160 mA, f = 921 MHz --all phase angles at frequency of test) All published data at TCASE = 25C unless otherwise indicated. Symbol Gps P-1dB h Y Min 17.0 12 55 -- Typ 18 14 60 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF 10193 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- -- 0.9 Max -- 1 5.0 -- Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 25 mA Drain-Source Leakage Current Gate Threshold Voltage Forward Transconductance VDS = 28 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 0.5 A Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation Above 25C derate by Storage Temperature Range Thermal Resistance (TCASE = 70C) TSTG RqJC Symbol VDSS VGS TJ PD Value 65 20 200 58 0.33 -40 to 150 3.0 Unit Vdc Vdc C Watts W/C C C/W Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency 20 18 Efficiency (%) 70 20 58 46 Broadband Test Fixture Performance Efficiency (%) 50 Output Power & Efficiency Gain (dB) Gain 16 14 12 Gain (dB) 16 Gain (dB) VDD = 26 V IDQ = 160 mA POUT = 10 W 40 -5 30 -10 20 -15 10 -20 0 960 34 22 10 960 IDQ = 160 mA Output Power (W) 12 Return Loss (dB) 10 860 880 900 920 940 8 920 930 940 950 Frequency (MHz) Frequency (MHz) 2 Return Loss VDD = 26 V Efficiency 60 e Power Gain vs. Output Power 20 19 PTF 10193 Output Power (at 1 dB Compression) vs. Supply Voltage 20 Output Power (Watts) IDQ = 160 mA VDD = 26 V f = 960 MHz Power Gain (dB) 18 17 IDQ = 80 mA 16 15 14 0 1 10 100 IDQ = 45 mA 18 16 14 12 10 22 24 26 28 30 IDQ = 160 mA f = 960 MHz Output Power (Watts) Supply Voltage (Volts) Intermodulation Distortion vs. Output Power (as measured in a broadband circuit) 0 50 45 40 35 30 25 20 15 10 5 0 0 3 6 9 12 15 18 Capacitance vs. Supply Voltage * 6 5 VDD = 26 V, IDQ =160 mA Cds and Cgs (pF) 3rd Order -10 f = 959.900 MHz 1 Cgs VGS = 0 V f = 1 MHz 3 2 1 IMD (dBc) -30 5th -40 -50 -60 7th Cds Crss 0 10 20 30 40 0 Output Power (Watts-PEP) Supply Voltage (Volts) Gate-Source Voltage vs. Case Temperature Gate-Source Voltage (Normalized) 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 -20 0 20 40 60 80 100 0.075 0.585 1.095 0.33 0.84 1.35 Voltage normalized to 1.0 V Series show current (A) Case Temperature (C) * This part is internally matched. Measurements of the finished product will not yield these figures. 3 Crss (pF) -20 f2 =960.000 MHz 4 PTF 10193 Impedance Data VDD = 26 V, IDQ = 160 mA, P-1dB = 12 W e Z Source W R 2.0 2.0 2.0 1.9 1.9 jX 2.7 2.6 2.4 2.3 2.1 Z0 = 50 W R 5.8 5.5 5.0 4.8 4.7 Frequency MHz 860 880 900 920 960 Z Load W jX 4.4 D Z Source Z Load G 4.6 5.0 5.1 5.3 S Typical Scattering Parameters (VDS = 26 V, ID = 400 mA) f (MHz) 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 Mag -0.284 -0.266 -0.241 -0.243 -0.231 -0.223 -0.231 -0.233 -0.241 -0.250 -0.287 -0.325 -0.397 -0.539 -0.839 -1.45 -1.98 -1.33 -0.689 -0.379 -0.231 -0.170 -0.123 -0.101 -0.072 S11 Ang -169 -171 -172 -173 -175 -176 -177 -178 -179 -180 179 178 177 176 174 174 180 -175 -176 -177 -178 -179 -180 179 179 Mag 12.4 10.7 9.20 7.86 6.68 5.74 4.90 4.22 3.77 3.53 3.36 3.54 4.04 4.89 6.06 7.55 8.01 5.76 2.23 -1.11 -4.10 -6.82 -9.12 -11.2 -13.2 S21 Ang 47.8 41.6 36.1 31.2 26.7 22.6 18.8 14.9 11.3 7.19 2.91 -1.78 -7.86 -15.7 -27.7 -47.7 -79.6 -113 -134 -146 -155 -159 -164 -167 -170 4 Mag -42.7 -43.7 -44.7 -45.4 -46.7 -47.6 -48.7 -49.6 -50.7 -51.5 -52.3 -53.1 -53.4 -53.4 -52.4 -50.9 -49.6 -49.5 -50.5 -50.5 -50.5 -50.2 -49.8 -49.3 -49.1 S12 Ang -34.2 -38.9 -41.9 -45.0 -47.2 -49.8 -51.6 -50.6 -50.0 -51.1 -48.2 -50.9 -52.3 -56.9 -68.8 -97.0 -140 175 147 127 118 109 104 101 99.7 Mag -1.62 -1.34 -1.24 -1.08 -0.958 -0.852 -0.818 -0.697 -0.633 -0.593 -0.576 -0.449 -0.391 -0.342 -0.247 -0.114 -0.232 -0.463 -0.527 -0.535 -0.552 -0.463 -0.470 -0.493 -0.466 S22 Ang -99.9 -108 -115 -121 -126 -131 -135 -138 -141 -144 -146 -148 -150 -152 -154 -156 -159 -160 -161 -162 -162 -163 -164 -164 -165 e Test Circuit PTF 10193 Test Circuit Schematic for f = 960 MHz DUT l1 l2 l3 l4 l5 l6 l7 PTF 10193 0.1425 l 960 MHz 0.1309 l 960 MHz 0.1640 l 960 MHz 0.0174 l 960 MHz 0.1916 l 960 MHz 0.0535 l 960 MHz 0.0321 l 960 MHz Microstrip 50 W Microstrip 9.29 W Microstrip 9.29 W Microstrip 29.4 W Microstrip 11.72 W Microstrip 50 W Microstrip 50 W C1, C2, C4, C7 C3 C5 C6 C8 C9 R1, R2, R3 L1 Circuit Board Capacitor, 36 pF 100B 360 Capacitor, 5.1 pF 100A 5R1 Capacitor, 0.1 mF, 50 V DIGI-KEY P4525-ND Capacitor, 100 mF, 50 V DIGI-KEY P5182-ND Capacitor, 3.6 pF 100B 3R6 Capacitor, 2.7 pF 100B 2R7 Resistor, 220 W DIGI-KEY 220QBK-ND 4 Turns, 20 AWG, .120 I.D.N/A G200, .031" Thick, 2 oz. Copper er = 4.00, AlliedSignal Assembly Diagram (not to scale) 5 PTF 10193 Test Circuit e Artwork (not to scale) Case Outline Specifications Package 20259 Ericsson Inc. MIcroelectronics Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1999, 2000 Ericsson Inc. EUS/KR 1522 -PTF 10193 Uen Rev. A 12-07-00 6 |
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